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Impact of in situ SiN[sub x] layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures

Impact of in situ SiN[sub x] layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures

E. Cho; S. Seo; C. Jin; D. Pavlidis; G. Fu; J. Tuerck; W. Jaegermann

作者E. Cho; S. Seo; C. Jin; D. Pavlidis; G. Fu; J. Tuerck; W. Jaegermann
卷第27卷
期第5期
文件大小699.53KB
发表时间2009
DOI10.1116/1.3186615

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