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[IEEE 2009 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan (2009.04.27-2009.04.29)] 2009 International Symposium on VLSI Technology, Systems, and Applications - A new technique to extract the gate bias dependent s/d series resistance of sub-100nm MOSFETs

[IEEE 2009 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan (2009.04.27-2009.04.29)] 2009 International Symposium on VLSI Technology, Systems, and Applications - A new technique to extract the gate bias dependent s/d series resistance of sub-100nm MOSFETs

Fleury, Dominique; Cros, Antoine; Bidal, Gregory; Brut, Hugues; Josse, Emmanuel; Ghibaudo, Gerard
  • 作者Fleury, Dominique; Cros, Antoine; Bidal, Gregory; Brut, Hugues; Josse, Emmanuel; Ghibaudo, Gerard
  • 文件大小250.74KB
  • 发表时间2009
  • DOI10.1109/vtsa.2009.5159314
  • 页码109-110
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