Gate-All-Around n-MOSFETs With Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter
- 期刊名称IEEE Electron Device Letters
- 作者Hashemi, P.; Gomez, L.; Hoyt, J.L.
- 卷第30卷
- 期第4期
- 印刷ISSN0741-3106
- 电子ISSN1558-0563
- 文件大小393.74KB
- 发表时间2009-04
- DOI10.1109/led.2009.2013877
- 页码401-403
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