[IEEE Related Materials (IPRM) - Newport Beach, CA, USA (2009.05.10-2009.05.14)] 2009 IEEE International Conference on Indium Phosphide & Related Materials - Influence of growth rate and temperature on InP/GaInAs interface structure analyzed by X-ray CTR scattering measurement
- 作者Tameoka, H.; Mori, A.; Tabuchi, M.; Takeda, Y.
- 文件大小353.00KB
- 发表时间2009
- DOI10.1109/iciprm.2009.5012414
- 页码55-58
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