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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - A novel damage-free high-k etch technique using neutral beam-assisted atomic layer etching (NBALE) for sub-32nm technology node low power metal gate/high-k dielectric CMOSFETs

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - A novel damage-free high-k etch technique using neutral beam-assisted atomic layer etching (NBALE) for sub-32nm technology node low power metal gate/high-k dielectric CMOSFETs

Min, K.S.; Kang, C. Y.; Park, C.; Park, C. S.; Park, B. J.; Park, J. B.; Hussain, M. M.; Lee, Jack C.; Lee, B. H.; Kirsch, P.; Tseng, H-H.; Jammy, R.; Yeom, G. Y.
  • 作者Min, K.S.; Kang, C. Y.; Park, C.; Park, C. S.; Park, B. J.; Park, J. B.; Hussain, M. M.; Lee, Jack C.; Lee, B. H.; Kirsch, P.; Tseng, H-H.; Jammy, R.; Yeom, G. Y.
  • 文件大小738.27KB
  • 发表时间2009
  • DOI10.1109/iedm.2009.5424330
  • 页码1-4
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