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[IEEE 2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems - Shenzhen, China (2009.01.5-2009.01.8)] 2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems - Influence of post-annealing on the mechanical and electrical properties of boron-doped nanocrystalline silicon thin films

[IEEE 2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems - Shenzhen, China (2009.01.5-2009.01.8)] 2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems - Influence of post-annealing on the mechanical and electrical properties of boron-doped nanocrystalline silicon thin films

Ding, J.N.; Qi, H.S.; Yuan, N.Y.; He, Y.L.; Cheng, G.G.
  • 作者Ding, J.N.; Qi, H.S.; Yuan, N.Y.; He, Y.L.; Cheng, G.G.
  • 文件大小949.03KB
  • 发表时间2009
  • DOI10.1109/NEMS.2009.5068607
  • 页码413-415
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