[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - A novel planar floating-gate (FG) / charge-trapping (CT) NAND device using BE-SONOS inter-poly dielectric (IPD)

Lue, Hang-Ting; Pei-Ying Du, ; Tzu-Hsuan Hsu, ; Yi-Hsuan Hsiao, ; Sheng-Chih Lai, ; Szu-Yu Wang, ; Shih-Ping Hong, ; Ming-Tsung Wu, ; Hsu, F. H.; Lien, N. Z.; Chi-Pin Lu, ; Jung-Yu Hsieh, ; Ling-Wu Yang, ; Tahone Yang, ; Kuang-Chao Chen, ; Kuang-Yeu Hsieh, ; Rich Liu, ; Chih-Yuan Lu,

作者Lue, Hang-Ting; Pei-Ying Du, ; Tzu-Hsuan Hsu, ; Yi-Hsuan Hsiao, ; Sheng-Chih Lai, ; Szu-Yu Wang, ; Shih-Ping Hong, ; Ming-Tsung Wu, ; Hsu, F. H.; Lien, N. Z.; Chi-Pin Lu, ; Jung-Yu Hsieh, ; Ling-Wu Yang, ; Tahone Yang, ; Kuang-Chao Chen, ; Kuang-Yeu Hsieh, ; Rich Liu, ; Chih-Yuan Lu,
文件大小1235.73KB
发表时间2009
DOI10.1109/iedm.2009.5424214
页码1-4

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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - A novel planar floating-gate (FG) / charge-trapping (CT) NAND device using BE-SONOS inter-poly dielectric (IPD)