Influence of the defect density (twins boundaries) on electrical parameters of 3C-SiC epitaxial films
- 作者Alexander A. Lebedev; Pavel L. Abramov; Sergey P. Lebedev; Gagik A. Oganesyan; Alla S. Tregubova; Dmitrii V. Shamshur
- 卷第404卷
- 印刷ISSN0921-4526
- 文件大小367.33KB
- 发表时间2009
- DOI10.1016/j.physb.2009.08.183
- 页码4758-4760
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