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Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT)

Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT)

T. Matsumoto; Asuha; W.-B. Kim; M. Yamada; S. Imai; S. Terakawa; H. Kobayashi

作者T. Matsumoto; Asuha; W.-B. Kim; M. Yamada; S. Imai; S. Terakawa; H. Kobayashi
卷第86卷
印刷ISSN0167-9317
文件大小212.70KB
发表时间2009
DOI10.1016/j.mee.2009.03.080
页码1939-1941

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