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Characterization of Phosphorus Implanted n<sup>+</sup>/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET

Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET

Moscatelli, Francesco; Nipoti, Roberta; Poggi, Antonella; Solmi, Sandro; Cristiani, Stefano; Sanmartin, Michele
  • 期刊名称Materials Science Forum
  • 作者Moscatelli, Francesco; Nipoti, Roberta; Poggi, Antonella; Solmi, Sandro; Cristiani, Stefano; Sanmartin, Michele
  • 电子ISSN1662-9752
  • 文件大小302.82KB
  • 发表时间2009
  • DOI10.4028/www.scientific.net/MSF.615-617.687
  • 页码687-690
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