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Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET

Poggi, Antonella; Moscatelli, Francesco; Solmi, Sandro; Nipoti, Roberta; Tamarri, Fabrizio; Pizzochero, G.

期刊名称Materials Science Forum
作者Poggi, Antonella; Moscatelli, Francesco; Solmi, Sandro; Nipoti, Roberta; Tamarri, Fabrizio; Pizzochero, G.
电子ISSN1662-9752
文件大小295.52KB
发表时间2009
DOI10.4028/www.scientific.net/MSF.615-617.761
页码761-764