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Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

Moscatelli, Francesco; Nipoti, Roberta; Solmi, Sandro; Cristiani, Stefano; Sanmartin, Michele; Poggi, Antonella
  • 期刊名称Materials Science Forum
  • 作者Moscatelli, Francesco; Nipoti, Roberta; Solmi, Sandro; Cristiani, Stefano; Sanmartin, Michele; Poggi, Antonella
  • 电子ISSN1662-9752
  • 文件大小326.55KB
  • 发表时间2009
  • DOI10.4028/www.scientific.net/MSF.600-603.699
  • 页码699-702
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