Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation
Moscatelli, Francesco; Nipoti, Roberta; Solmi, Sandro; Cristiani, Stefano; Sanmartin, Michele; Poggi, Antonella
- 期刊名称Materials Science Forum
- 作者Moscatelli, Francesco; Nipoti, Roberta; Solmi, Sandro; Cristiani, Stefano; Sanmartin, Michele; Poggi, Antonella
- 电子ISSN1662-9752
- 文件大小326.55KB
- 发表时间2009
- DOI10.4028/www.scientific.net/MSF.600-603.699
- 页码699-702