Two-dimensional threshold voltage model and design considerations for gate electrode work function engineered recessed channel nanoscale MOSFET: I
- 期刊名称Semiconductor Science and Technology
- 作者Chaujar, Rishu; Kaur, Ravneet; Saxena, Manoj; Gupta, Mridula; Gupta, R S
- 卷第24卷
- 期第6期
- 印刷ISSN0268-1242
- 电子ISSN1361-6641
- 文件大小269.81KB
- 发表时间2009-06-01
- DOI10.1088/0268-1242/24/6/065005
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