Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors

• 作者Peter G. Muzykov; Robert M. Kennedy; Qingchun (Jon) Zhang; Craig Capell; Al Burk; Anant Agarwal; Tangali S. Sudarshan
• 卷第49卷
• 期第1期
• 印刷ISSN0026-2714
• 文件大小1119.92KB
• 发表时间2009
• DOI10.1016/j.microrel.2008.10.009
• 页码32-37