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Effects of Post-Deposition Annealing on CeO<sub>2</sub> Gate Prepared by Metal-Organic Decomposition (MOD) Method on 4H-SiC

Effects of Post-Deposition Annealing on CeO₂ Gate Prepared by Metal-Organic Decomposition (MOD) Method on 4H-SiC

Lim, Way Foong; Cheong, Kuan Yew; Lockman, Zainovia; Jasni, Farah Ainis; Quah, Hock Jin

期刊名称Materials Science Forum
作者Lim, Way Foong; Cheong, Kuan Yew; Lockman, Zainovia; Jasni, Farah Ainis; Quah, Hock Jin
电子ISSN1662-9752
文件大小598.31KB
发表时间2010-4
DOI10.4028/www.scientific.net/MSF.645-648.837
页码837-840

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