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Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike

Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike

Onoda, Shinobu; Makino, Takahiro; Iwamoto, Naoya; Vizkelethy, Gyorgy; Kojima, Kazutoshi; Nozaki, Shinji; Ohshima, Takeshi
  • 期刊名称IEEE Transactions on Nuclear Science
  • 作者Onoda, Shinobu; Makino, Takahiro; Iwamoto, Naoya; Vizkelethy, Gyorgy; Kojima, Kazutoshi; Nozaki, Shinji; Ohshima, Takeshi
  • 印刷ISSN0018-9499
  • 文件大小437.98KB
  • 发表时间2010-12
  • DOI10.1109/TNS.2010.2070076
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