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Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

Myoung-Jae Lee, ; Chang Bum Lee, ; Dongsoo Lee, ; Seung Ryul Lee, ; Jihyun Hur, ; Seung-Eon Ahn, ; Man Chang, ; Young-Bae Kim, ; U-In Chung, ; Chang-Jung Kim, ; Dong-Sik Kim, ; Hosun Lee,
  • 期刊名称IEEE Electron Device Letters
  • 作者Myoung-Jae Lee, ; Chang Bum Lee, ; Dongsoo Lee, ; Seung Ryul Lee, ; Jihyun Hur, ; Seung-Eon Ahn, ; Man Chang, ; Young-Bae Kim, ; U-In Chung, ; Chang-Jung Kim, ; Dong-Sik Kim, ; Hosun Lee,
  • 卷第31卷
  • 期第7期
  • 印刷ISSN0741-3106
  • 电子ISSN1558-0563
  • 文件大小304.39KB
  • 发表时间2010-07
  • DOI10.1109/led.2010.2048886
  • 页码725-727
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