[IEEE 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Gainesville, FL, USA (2010.09.28-2010.10.1)] 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - 22nm node p+ USJ defect analysis with various PAI and HALO structures using laser annealing
Borland, John; Tallian, Milkos; Kosztka, David; Pap, Aron; Mocsar, Kalman; Somogyi, Andras; Nadudvari, Gyorgy; Jastrzebski, Lubek; Pavelka, Tibor
- 作者Borland, John; Tallian, Milkos; Kosztka, David; Pap, Aron; Mocsar, Kalman; Somogyi, Andras; Nadudvari, Gyorgy; Jastrzebski, Lubek; Pavelka, Tibor
- 文件大小2942.67KB
- 发表时间2010
- DOI10.1109/rtp.2010.5623804
- 页码158-165