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A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors

A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors

Tiwari, Pramod Kumar; Dubey, Sarvesh; Singh, Manjeet; Jit, S.
  • 期刊名称Journal of Applied Physics
  • 作者Tiwari, Pramod Kumar; Dubey, Sarvesh; Singh, Manjeet; Jit, S.
  • 卷第108卷
  • 期第7期
  • 印刷ISSN0021-8979
  • 文件大小1010.22KB
  • 发表时间2010
  • DOI10.1063/1.3488605
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