The impact of SiN[sub x] gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature-illumination stress

Jung, Ji Sim; Son, Kyoung Seok; Lee, Kwang-Hee; Park, Joon Seok; Kim, Tae Sang; Kwon, Jang-Yeon; Chung, Kwun-Bum; Park, Jin-Seong; Koo, Bonwon; Lee, Sangyun

期刊名称Applied Physics Letters
作者Jung, Ji Sim; Son, Kyoung Seok; Lee, Kwang-Hee; Park, Joon Seok; Kim, Tae Sang; Kwon, Jang-Yeon; Chung, Kwun-Bum; Park, Jin-Seong; Koo, Bonwon; Lee, Sangyun
卷第96卷
期第19期
印刷ISSN0003-6951
文件大小474.16KB
发表时间2010
DOI10.1063/1.3429588

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The impact of SiN[sub x] gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature-illumination stress