[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - In place growth of vertical Si nanowires for surround gated MOSFETs with self aligned contact formation
- 作者Lugstein, A.; Steinmair, M.; Henkel, C.; Bertagnolli, E.
- 文件大小166.29KB
- 发表时间2010
- DOI10.1109/inec.2010.5424987
- 页码1138-1139
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