Theoretical analysis of the vertical LOCOS DMOS transistor with process-induced stress enhancement
- 作者S. Reggiani; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise
- 卷第54卷
- 期第9期
- 印刷ISSN0038-1101
- 文件大小1027.94KB
- 发表时间2010
- DOI10.1016/j.sse.2010.04.014
- 页码950-956
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