Modeling of gate-all-around charge trapping SONOS memory cells
- 作者E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani; J. Fu; N. Singh; G.Q. Lo; D.L. Kwong
- 卷第54卷
- 期第9期
- 印刷ISSN0038-1101
- 文件大小1094.77KB
- 发表时间2010
- DOI10.1016/j.sse.2010.04.026
- 页码997-1002
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