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Comparison of electron transmittances and tunneling currents in an anisotropic TiN
<sub/><i>x</i>
</sub>
/HfO
<sub/>2</sub>
/SiO
<sub/>2</sub>
/p-Si(100) metal—oxide—semiconductor (MOS) capacitor calculated using exponential- and Airy-wavefunction approaches and a transfer matrix method

Comparison of electron transmittances and tunneling currents in an anisotropic TiN _x /HfO ₂ /SiO ₂ /p-Si(100) metal—oxide—semiconductor (MOS) capacitor calculated using exponential- and Airy-wavefunction approaches and a transfer matrix method

Noor, Fatimah A; Abdullah, Mikrajuddin; Sukirno, ; Khairurrijal,

期刊名称Journal of Semiconductors
作者Noor, Fatimah A; Abdullah, Mikrajuddin; Sukirno, ; Khairurrijal,
卷第31卷
期第12期
印刷ISSN1674-4926
文件大小403.02KB
发表时间2010-12
DOI10.1088/1674-4926/31/12/124002

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