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[IEEE 1998 Fourth International High Temperature Electronics Conference. HITEC - Albuquerque, NM, USA (14-18 June 1998)] 1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145) - High temperature ohmic contacts to p-type SiCCrofton, J.; Beyer, L.; Hogue, T.; Siergiej, R.R.; Mani, S.; Casady, J.B.; Oder, T.N.; Williams, J.R.; Luckowski, E.D.; Isaacs-Smith, T.; Iyer, V.R.; Mohney, S.E. · 1998
[AEA Technol Third European Conference on High Temperature Electronics - Berlin, Germany (4-7 July 1999)] HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) - Temperature dependence of avalanche breakdown in GaAs p-i-n diodesDavid, J.P.R.; Ghin, R.; Plimmer, S.A.; Rees, G.J.; Grey, R. · 1999
[IEEE 1998 Fourth International High Temperature Electronics Conference. HITEC - Albuquerque, NM, USA (14-18 June 1998)] 1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145) - Thermally stable ohmic contacts to 6H- and 4H- p-type SiCLiu, S.; Scofield, J. · 1998
[IEEE 1998 Fourth International High Temperature Electronics Conference. HITEC - Albuquerque, NM, USA (14-18 June 1998)] 1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145) - Electrical characteristics of tantalum and tantalum carbide Schottky diodes on n- and p-type silicon carbide as a function of temperatureJang, T.; Porter, L.M. · 1998
[AEA Technol Third European Conference on High Temperature Electronics - Berlin, Germany (4-7 July 1999)] HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) - Electrical and optical properties of Mg ion implanted GaN p-n junctionsKalinina, E.V.; Zubrilov, A.S.; Strel'chuk, A.M.; Solov'ev, V.A.; Dmitriev, V.A. · 1999
[AEA Technol Third European Conference on High Temperature Electronics - Berlin, Germany (4-7 July 1999)] HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) - Effect of irradiation on excess currents in 6H-SiC p-n structuresStrel'chuk, A.M.; Kozlovski, V.V.; Smirnova, N.Yu.; Pil'kevich, J.J.P.; Rastegaeva, M.G. · 1999
Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED ApplicationsTanner, Philip; Iacopi, Alan; Phan, Hoang-Phuong; Dimitrijev, Sima; Hold, Leonie; Chaik, Kien; Walker, Glenn; Dao, Dzung Viet; Nguyen, Nam-Trung · Scientific Reports · 2017
[IEEE 27th International Spring Seminar on Electronics Technology - Bankya, Bulgaria (13-16 May 2004)] 27th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. - High temperature and high power stability investigation of Al-based ohmic contacts to p-type 4H-SiCKakanakov, R.; Kasamakova-Kolaklieva, L.; Hristeva, N.; Lepoeva, G.; Gomes, J.B.; Avramova, I.; Marinova, T. · 2005
High-Temperature Electronics || HighTemperature Electronics PackagingKirschman, Randall · 1998
High-Temperature Electronics || HighTemperature Electronics for AutomobilesKirschman, Randall · 1998
High-Temperature Electronics || Extension of HighTemperature ElectronicsKirschman, Randall · 1998
Summary – Fourth European Workshop on Low Temperature ElectronicsRandall Kirschman · 2000
High-Temperature Electronics || Thermal Aging of ThickFilm ResistorsKirschman, Randall · 1998
Frozen Cells and Bits: Cryoelectronics Advances BiopreservationIhmig, Frank R.; Shirley, Stephen G.; Kirschman, Randall K.; Zimmermann, Heiko · IEEE Pulse · 2013
High-Temperature Electronics || High Temperature Transistor and Thyristor DevelopedKirschman, Randall · 1998
Elektrolytische DissoziationH. D. Kirschman; B. Wingfield; H. J. Lucas; E. Einecke; M. Randall; L. E. Young; P. Debye; E. Hückel; Fr. L Hahn; R. Klockmann; C. E. Davis; J. M. Kolthoff; Hennig; Ph. Groß; A. Goldstern; Ch. A. Kraus; R. P. Seward · 1932