Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current
- 作者Peter G. Muzykov; Ramesh Krishna; Sandip Das; Timothy Hayes; Tangali S. Sudarshan; Krishna C. Mandal
- 卷第65卷
- 期第5期
- 印刷ISSN0167-577X
- 文件大小301.11KB
- 发表时间2011
- DOI10.1016/j.matlet.2010.11.074
- 页码911-914
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