Formation mechanism of twin boundaries during crystal growth of silicon

• 作者Kentaro Kutsukake; Takuro Abe; Noritaka Usami; Kozo Fujiwara; Kohei Morishita; Kazuo Nakajima
• 卷第65卷
• 期第6期
• 印刷ISSN1359-6462
• 文件大小496.74KB
• 发表时间2011
• DOI10.1016/j.scriptamat.2011.06.028
• 页码556-559