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Interface formation between CuIn1 − xGaxSe2 absorber and In2S3 buffer layer deposited by ultrasonic spray pyrolysis

Interface formation between CuIn1 − xGaxSe2 absorber and In2S3 buffer layer deposited by ultrasonic spray pyrolysis

S. Buecheler; F. Pianezzi; C. Fella; A. Chirila; K. Decock; M. Burgelman; A.N. Tiwari
  • 作者S. Buecheler; F. Pianezzi; C. Fella; A. Chirila; K. Decock; M. Burgelman; A.N. Tiwari
  • 卷第519卷
  • 期第21期
  • 印刷ISSN0040-6090
  • 文件大小492.28KB
  • 发表时间2011
  • DOI10.1016/j.tsf.2011.01.370
  • 页码7560-7563
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