Incremental Enhancement of SEU Hardened 90 nm CMOS Memory Cell

Haddad, Nadim F.; Kelly, Andrew T.; Lawrence, Reed K.; Li, Bin; Rodgers, John C.; Ross, Jason F.; Warren, Kevin M.; Weller, Robert A.; Mendenhall, Marcus H.; Reed, Robert A.

期刊名称IEEE Transactions on Nuclear Science
作者Haddad, Nadim F.; Kelly, Andrew T.; Lawrence, Reed K.; Li, Bin; Rodgers, John C.; Ross, Jason F.; Warren, Kevin M.; Weller, Robert A.; Mendenhall, Marcus H.; Reed, Robert A.
卷第58卷
期第3期
印刷ISSN0018-9499
电子ISSN1558-1578
文件大小1009.72KB
发表时间2011-06
DOI10.1109/TNS.2011.2128882
页码975-980

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Incremental Enhancement of SEU Hardened 90 nm CMOS Memory Cell