Effects of channel layer thickness on the electrical characteristics of top-gate staggered microcrystalline-Si thin-film transistors

• 作者M.-H. Juang; Y.-S. Peng; D.-C. Shye; C.-C. Hwang; J.-L. Wang
• 卷第88卷
• 期第7期
• 印刷ISSN0167-9317
• 文件大小599.31KB
• 发表时间2011
• DOI10.1016/j.mee.2010.11.002
• 页码1582-1585