[IEEE 2011 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) - Kota Kinabalu, Sabah, Malaysia (2011.09.28-2011.09.30)] 2011 IEEE Regional Symposium on Micro and Nano Electronics - Influence of the gate thickness on the memory behavior of MFIS-FETs
- 作者Saif, Ala'eddin A.; Jamal, Z. A. Z.; Sauli, Z.; Poopalan, P.
- 文件大小643.73KB
- 发表时间2011
- DOI10.1109/rsm.2011.6088278
- 页码1-5
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