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Evaluation of Cu Diffusion From Cu Through-Silicon Via (TSV) in Three-Dimensional LSI by Transient Capacitance Measurement

Evaluation of Cu Diffusion From Cu Through-Silicon Via (TSV) in Three-Dimensional LSI by Transient Capacitance Measurement

Bea, Jichel; Lee, Kangwook; Fukushima, Takafumi; Tanaka, Tetsu; Koyanagi, Mitsumasa
  • 期刊名称IEEE Electron Device Letters
  • 作者Bea, Jichel; Lee, Kangwook; Fukushima, Takafumi; Tanaka, Tetsu; Koyanagi, Mitsumasa
  • 卷第32卷
  • 期第7期
  • 印刷ISSN0741-3106
  • 电子ISSN1558-0563
  • 文件大小354.10KB
  • 发表时间2011-07
  • DOI10.1109/led.2011.2141109
  • 页码940-942
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