Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field
Takahashi, Tsunaki; Kodera, Tetsuo; Oda, Shunri; Uchida, Ken
- 期刊名称Journal of Applied Physics
- 作者Takahashi, Tsunaki; Kodera, Tetsuo; Oda, Shunri; Uchida, Ken
- 卷第109卷
- 期第3期
- 印刷ISSN0021-8979
- 文件大小635.92KB
- 发表时间2011
- DOI10.1063/1.3543990