发现好书期刊,享受阅读乐趣

海量图书期刊资源,随时随地畅享阅读乐趣

Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field

Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field

Takahashi, Tsunaki; Kodera, Tetsuo; Oda, Shunri; Uchida, Ken
  • 期刊名称Journal of Applied Physics
  • 作者Takahashi, Tsunaki; Kodera, Tetsuo; Oda, Shunri; Uchida, Ken
  • 卷第109卷
  • 期第3期
  • 印刷ISSN0021-8979
  • 文件大小635.92KB
  • 发表时间2011
  • DOI10.1063/1.3543990
← 返回【学霸图书馆】主页