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The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy

The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy

Coleman, P. G.; Nash, D.; Edwardson, C. J.; Knights, A. P.; Gwilliam, R. M.

期刊名称Journal of Applied Physics
作者Coleman, P. G.; Nash, D.; Edwardson, C. J.; Knights, A. P.; Gwilliam, R. M.
卷第110卷
期第1期
印刷ISSN0021-8979
文件大小453.59KB
发表时间2011
DOI10.1063/1.3605487

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