[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - Safe operating area of AlGaAs/InGaAs/GaAs HEMT power transistors
Pala, Vipindas; Hella, Mona; Chow, T. Paul
- 作者Pala, Vipindas; Hella, Mona; Chow, T. Paul
- 文件大小919.16KB
- 发表时间2011
- DOI10.1109/ISPSD.2011.5890836
- 页码243-246