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Toward a better understanding of the nanoscale degradation mechanisms of ultra-thin Si02∕Si films: Investigation of the best experimental conditions with a conductive-atomic force microscope

Toward a better understanding of the nanoscale degradation mechanisms of ultra-thin Si02∕Si films: Investigation of the best experimental conditions with a conductive-atomic force microscope

Arinero, R.; Hourani, W.; Touboul, A. D.; Gautier, B.; Ramonda, M.; Albertini, D.; Militaru, L.; Gonzalez-Velo, Y.; Guasch, C.; Saigné, F.
  • 期刊名称Journal of Applied Physics
  • 作者Arinero, R.; Hourani, W.; Touboul, A. D.; Gautier, B.; Ramonda, M.; Albertini, D.; Militaru, L.; Gonzalez-Velo, Y.; Guasch, C.; Saigné, F.
  • 卷第110卷
  • 期第1期
  • 印刷ISSN0021-8979
  • 文件大小2028.76KB
  • 发表时间2011
  • DOI10.1063/1.3603037
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