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Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

B. Roul; M. K. Rajpalke; T. N. Bhat; M. Kumar; N. Sinha; A. T. Kalghatgi; S. B. Krupanidhi
  • 作者B. Roul; M. K. Rajpalke; T. N. Bhat; M. Kumar; N. Sinha; A. T. Kalghatgi; S. B. Krupanidhi
  • 文件大小1650.33KB
  • 发表时间2011
  • DOI10.1063/1.3549685
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