发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III–V Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III–V Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Maegawa, Yōsuke; Koba, Shunsuke; Tsuchiya, Hideaki; Ogawa, Matsuto

期刊名称Applied Physics Express
作者Maegawa, Yōsuke; Koba, Shunsuke; Tsuchiya, Hideaki; Ogawa, Matsuto
卷第4卷
期第8期
印刷ISSN1882-0778
电子ISSN1882-0786
文件大小433.16KB
发表时间2011-8-1
DOI10.1143/APEX.4.084301

← 返回【学霸图书馆】主页