Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier
Ma, Xiao-Hua; Yu, Hui-You; Quan, Si; Yang, Li-Yuan; Pan, Cai-Yuan; Yang, Ling; Wang, Hao; Zhang, Jin-Cheng; Hao, Yue
- 期刊名称Chinese Physics B
- 作者Ma, Xiao-Hua; Yu, Hui-You; Quan, Si; Yang, Li-Yuan; Pan, Cai-Yuan; Yang, Ling; Wang, Hao; Zhang, Jin-Cheng; Hao, Yue
- 卷第20卷
- 期第2期
- 印刷ISSN1674-1056
- 文件大小424.64KB
- 发表时间2011-02
- DOI10.1088/1674-1056/20/2/027303