Highly manufacturable silicon vertical diode switches for new memories using selective epitaxial growth with batch-type equipment

Lee, K S; Han, J J; Kim, B H; Lim, H J; Nam, S W; Kang, H K; Chung, C H; Jeong, H S; Park, H H; Jeong, H W; Kim, K R; Choi, B D

期刊名称Semiconductor Science and Technology
作者Lee, K S; Han, J J; Kim, B H; Lim, H J; Nam, S W; Kang, H K; Chung, C H; Jeong, H S; Park, H H; Jeong, H W; Kim, K R; Choi, B D
卷第26卷
期第5期
印刷ISSN0268-1242
电子ISSN1361-6641
文件大小610.09KB
发表时间2011-05-11
DOI10.1088/0268-1242/26/5/055022

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