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Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO<sub>2</sub> Capacitors at Low Temperature Caused by near Interface States

Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface States

Pintilie, Ioana; Moscatelli, Francesco; Nipoti, Roberta; Poggi, Antonella; Solmi, Sandro; Løvlie, Lars S.; Svensson, Bengt G.
  • 期刊名称Materials Science Forum
  • 作者Pintilie, Ioana; Moscatelli, Francesco; Nipoti, Roberta; Poggi, Antonella; Solmi, Sandro; Løvlie, Lars S.; Svensson, Bengt G.
  • 电子ISSN1662-9752
  • 文件大小310.57KB
  • 发表时间2011-3
  • DOI10.4028/www.scientific.net/MSF.679-680.346
  • 页码346-349
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