AIP Conference Proceedings [AIP ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010 - Kyoto, (Japan) (6–11 June 2010)] - Photo-Induced Carrier Recombination Properties of Silicon caused by H[sup +] Implantation
Fujimoto, Y.; Tatemichi, J.; Inouchi, Y.; Naito, M.; Nagao, Y.; Kogure, K.; Yoshitomi, S.; Kanda, Y.; Hasumi, M.; Sameshima, T.; Matsuo, Jiro; Kase, Masataka; Aoki, Takaaki; Seki, Toshio
- 作者Fujimoto, Y.; Tatemichi, J.; Inouchi, Y.; Naito, M.; Nagao, Y.; Kogure, K.; Yoshitomi, S.; Kanda, Y.; Hasumi, M.; Sameshima, T.; Matsuo, Jiro; Kase, Masataka; Aoki, Takaaki; Seki, Toshio
- 印刷ISSN0094-243X
- 文件大小455.47KB
- 发表时间2011
- DOI10.1063/1.3548352
- 页码212-215