AIP Conference Proceedings [AIP ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010 - Kyoto, (Japan) (6–11 June 2010)] - Characteristics of ZnO Wafers Implanted with 60 keV Sn[sup +] Ions at Room Temperature and at 110 K
Dang, Giang T.; Kawaharamura, Toshiyuki; Hirao, Takashi; Nitta, Noriko; Taniwaki, Masafumi; Matsuo, Jiro; Kase, Masataka; Aoki, Takaaki; Seki, Toshio
- 作者Dang, Giang T.; Kawaharamura, Toshiyuki; Hirao, Takashi; Nitta, Noriko; Taniwaki, Masafumi; Matsuo, Jiro; Kase, Masataka; Aoki, Takaaki; Seki, Toshio
- 印刷ISSN0094-243X
- 文件大小614.06KB
- 发表时间2011
- DOI10.1063/1.3548372
- 页码270-273