Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
Kadotani, Naotoshi; Ohashi, Teruyuki; Takahashi, Tsunaki; Oda, Shunri; Uchida, Ken
- 期刊名称Japanese Journal of Applied Physics
- 作者Kadotani, Naotoshi; Ohashi, Teruyuki; Takahashi, Tsunaki; Oda, Shunri; Uchida, Ken
- 卷第50卷
- 期第9期
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小587.37KB
- 发表时间2011-9-20
- DOI10.1143/JJAP.50.094101