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AIP Conference Proceedings [AIP PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors - Seoul, (Korea) (25–30 July 2010)] - Chemical Reactions and Mechanical Properties of the Directly Bonded Ge-Si Interface

AIP Conference Proceedings [AIP PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors - Seoul, (Korea) (25–30 July 2010)] - Chemical Reactions and Mechanical Properties of the Directly Bonded Ge-Si Interface

Byun, Ki Yeol; Ferain, Isabelle; Yu, Ran; Colinge, Cindy; Ihm, Jisoon; Cheong, Hyeonsik
  • 作者Byun, Ki Yeol; Ferain, Isabelle; Yu, Ran; Colinge, Cindy; Ihm, Jisoon; Cheong, Hyeonsik
  • 印刷ISSN0094-243X
  • 文件大小259.07KB
  • 发表时间2011
  • DOI10.1063/1.3666325
  • 页码201-202
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