Analytical modeling for 3D potential distribution of rectangular gate (RecG) gate-all-around (GAA) MOSFET in subthreshold and strong inversion regions

• 作者Dheeraj Sharma; Santosh Kumar Vishvakarma
• 卷第43卷
• 期第6期
• 印刷ISSN0026-2692
• 文件大小594.94KB
• 发表时间2012
• DOI10.1016/j.mejo.2012.02.001
• 页码358-363