Breakdown voltage improvement of LDMOSs by charge balancing: An inserted P-layer in trench oxide (IPT-LDMOS)

• 作者Ali A. Orouji; Mahsa Mehrad
• 卷第51卷
• 期第3期
• 印刷ISSN0749-6036
• 电子ISSN1096-3677
• 文件大小609.56KB
• 发表时间2012
• DOI10.1016/j.spmi.2012.01.005
• 页码412-420