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Void properties in silicon heavily doped with arsenic and phosphorus

Void properties in silicon heavily doped with arsenic and phosphorus

Vladimir Voronkov; Robert Falster; Maria Porrini; Januscia Duchini

作者Vladimir Voronkov; Robert Falster; Maria Porrini; Januscia Duchini
印刷ISSN1862-6319
文件大小267.12KB
发表时间2012
DOI10.1002/pssa.201200043

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