Growth of GaN boules via vertical HVPE
- 作者E. Richter; M. Gründer; C. Netzel; M. Weyers; G. Tränkle
- 卷第350卷
- 期第1期
- 印刷ISSN0022-0248
- 文件大小412.01KB
- 发表时间2012
- DOI10.1016/j.jcrysgro.2011.12.030
Growth and scintillation properties of Pr doped Gd3(Ga,Al)5O12 single crystalsKei Kamada; Takayuki Yanagida; Jan Pejchal; Martin Nikl; Takanori Endo; Kousuke Tsutumi; Yoshiyuki Usuki; Yutaka Fujimoto; Akihiro Fukabori; Akira Yoshikawa · 2012
Growth and Scintillation Properties of Pr-Doped Gd<formula formulatype="inline"><tex notation="TeX">$_{3}$</tex></formula>(Ga,Al)<formula formulatype="inline"><tex notation="TeX">$_{5}$</tex></formula>O<formula formulatype="inline"><tex notation="TeX">$_{12}$</tex></formula> Single CrystalsKamada, Kei; Yanagida, Takayuki; Pejchal, Jan; Nikl, Martin; Endo, Takanori; Tsutumi, Kousuke; Usuki, Yoshiyuki; Fujimoto, Yutaka; Fukabori, Akihiro; Yoshikawa, Akira · IEEE Transactions on Nuclear Science · 2012
[IEEE 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference (2011 NSS/MIC) - Valencia, Spain (2011.10.23-2011.10.29)] 2011 IEEE Nuclear Science Symposium Conference Record - Scintillation properties of Ce doped (Lu,Gd)<inf>3</inf>(Ga,Al)<inf>5</inf>O<inf>12</inf> single crystal grown by the micro-puling-down methodEndo, Takanori; Kamada, Kei; Yanagida, Takayuki; Tsutumi, Kousuke; Usuki, Yoshiyuki; Nikl, Martin; Fujimoto, Yutaka; Fukabori, Akihiro; Yoshikawa, Akira · 2011