Modeling for multilevel switching in oxide-based bipolar resistive memory

Hur, Ji-Hyun; Kim, Kyung Min; Chang, Man; Lee, Seung Ryul; Lee, Dongsoo; Lee, Chang Bum; Lee, Myoung-Jae; Kim, Young-Bae; Kim, Chang-Jung; Chung, U-In

期刊名称Nanotechnology
作者Hur, Ji-Hyun; Kim, Kyung Min; Chang, Man; Lee, Seung Ryul; Lee, Dongsoo; Lee, Chang Bum; Lee, Myoung-Jae; Kim, Young-Bae; Kim, Chang-Jung; Chung, U-In
卷第23卷
期第22期
印刷ISSN0957-4484
电子ISSN1361-6528
文件大小697.90KB
发表时间2012-06-08
DOI10.1088/0957-4484/23/22/225702

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Modeling for multilevel switching in oxide-based bipolar resistive memory